Thank you for your interest in Bae Systems Inc part number 201842-001, a Microcircuit Memory product we carry that is featured with the NSN 5962-01-199-9161. This component is ready for purchase at any time, so you are encouraged to complete the Request for Quote (RFQ) form provided below if you would like to obtain pricing information for your consideration. All we ask is that you supply us with essential details like desired item quantities, target price, and when fulfillment is expected, as this will ensure our response caters to any distinct specifications.
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At ASAP Semiconductor, our goal is to make the process of finding and securing precise components simple, which is why we present vital listing details with each offering here on Boundless Aerospace. For instance, part number 201842-001 was manufactured by Bae Systems Inc under the CAGECode 81413, and with the NSN 5962-01-199-9161, it belongs to FSC 5962 Microcircuits Electronic. More than that, all our inventory is delivered with any pertinent qualifying certifications or manufacturer trace documentation for your further benefit. Bearing all of this in mind, be sure to request a quote for part number 201842-001 today, and we will be in touch as soon as possible.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-199-9161 Item PartTypeName: MICROCIRCUIT,MEMORY | 5962 | 011999161 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 201842-001 | 3 | 2 | 3 |
| MRC | Criteria | Characteristic |
|---|---|---|
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-3 MIL-M-38510 |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.3 VOLTS MINIMUM POWER SOURCE AND 6.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 300.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 300.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TEST | TEST DATA DOCUMENT | 81413-201842 DRAWING (THIS IS THE BASIC GOVERNING DRAWING,SUCH AS A CONTRACTOR DRAWING,ORIGINAL EQUIPMENT MANUFACTURER DRAWING,ETC.; EXCLUDES ANY SPECIFICATION,STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWI |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
| ADAQ | BODY LENGTH | 1.290 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.210 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 855.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | -55.0/125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/125.0 DEG CELSIUS |
| AGAV | END ITEM IDENTIFICATION | RECEIVING SET,COUNTERMEASURES AN/ALR-56C |
| CBBL | FEATURES PROVIDED | MONOLITHIC AND ERASABLE AND PROGRAMMABLE AND ELECTROSTATIC SENSITIVE AND W/ENABLE AND BIDIRECTIONAL |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 21 INPUT |
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