Thank you for your interest in Fairchild Semiconductor Corp part number JR29681DR, a Microcircuit Memory product we carry that is featured with the NSN 5962-01-467-9859. This component is ready for purchase at any time, so you are encouraged to complete the Request for Quote (RFQ) form provided below if you would like to obtain pricing information for your consideration. All we ask is that you supply us with essential details like desired item quantities, target price, and when fulfillment is expected, as this will ensure our response caters to any distinct specifications.
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At ASAP Semiconductor, our goal is to make the process of finding and securing precise components simple, which is why we present vital listing details with each offering here on Boundless Aerospace. For instance, part number JR29681DR was manufactured by Fairchild Semiconductor Corp under the CAGECode 07933, and with the NSN 5962-01-467-9859, it belongs to FSC 5962 Microcircuits Electronic. More than that, all our inventory is delivered with any pertinent qualifying certifications or manufacturer trace documentation for your further benefit. Bearing all of this in mind, be sure to request a quote for part number JR29681DR today, and we will be in touch as soon as possible.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-467-9859 Item PartTypeName: MICROCIRCUIT,MEMORY | 5962 | 014679859 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| JR29681DR | 5 | 9 | 5 |
| MRC | Criteria | Characteristic |
|---|---|---|
| TTQY | Terminal Type And Quantity | 24 PRINTED CIRCUIT |
| CZEQ | Time Rating Per Chacteristic | 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| AFJQ | Storage Temp Range | -65.0/+150.0 DEG CELSIUS |
| TEST | Test Data Document | 81349-MIL-PRF-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL", "AVERAGE", "NOMINAL", ETC.). |
| CQZP | Input Circuit Pattern | 14 INPUT |
| CQSJ | Inclosure Material | CERAMIC AND GLASS |
| ADAT | Body Width | 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM |
| CWSG | Terminal Surface Treatment | SOLDER |
| CBBL | Features Provided | HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND BIPOLAR AND PROGRAMMABLE AND PROGRAMMED AND SCHOTTKY AND W/BUFFERED OUTPUT |
| MRC | Decoded Requirement | Clear Text Reply |
| ADAQ | Body Length | 1.290 INCHES MAXIMUM |
| AEHX | Maximum Power Dissipation Rating | 1.02 WATTS |
| ADAU | Body Height | 0.150 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
| FEAT | Special Features | BUILT UNDER MIL SPEC MIL-PRF-38510/21 |
| CTFT | Case Outline Source And Designator | D-3 MIL-M-38510 |
| CQSZ | Inclosure Configuration | DUAL-IN-LINE |
| AFGA | Operating Temp Range | -55.0/+125.0 DEG CELSIUS |
| ZZZK | Specification/Standard Data | 81349-MIL-PRF-38510/21 GOVERNMENT SPECIFICATION |
| CZER | Memory Device Type | ROM |
| CZEN | Voltage Rating And Type Per Characteristic | 5.5 VOLTS MAXIMUM POWER SOURCE |
| CQWX | Output Logic Form | TRANSISTOR-TRANSISTOR LOGIC |
| CZZZ | Memory Capacity | UNKNOWN |
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